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Impurity doped during epitaxy will diffuse in the epitaxial layer and even into the substrate.

在半导体器件制造的外延工艺中,外延生长时通常要掺入杂质.

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The crystal growth by glow discharge sputterings and ion beam sputterings and thecrystal epitaxy are introduced.

介绍了气相中晶体生长的方法,如辉光放电溅射法和离子束溅射沉积法以及晶体外延生长的方法.

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Recent advances in heteroepitaxial growth of high quality GaN films by MOCVD and HVPE is reviewed.

介绍了采用MOCVD或HVPE技术高质量异质外延生长GaN薄膜的发展状况.

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